Boston, MA 06/06/2014 (wallstreetpr) – Applied Materials, Inc. (NASDAQ:AMAT) on May 28, 2014 introduced Endura® Ventura(TM) PVD system which will enable the customers in bringing down the cost of creating smaller, low power, high-performance integrated 3D chips.
Features of the Ventura system
- The Ventura system of AMAT makes use of the latest innovations of the company to industry-leading PVD* technology, which in turn allows deposition of thin, continuous barrier along with seed layers in Through-Silicon-Vias (TSVs). It is important to note that TSVs are very crucial technology for vertical fabrication of lower power and smaller high-bandwidth devices and mobiles.
- Apart from this, the Ventura system also forwards support of titanium use in the volume production in the form of alternate barrier material with lower cost.
- The Ventura system will allow Applied Materials, Inc. (NASDAQ:AMAT) in expanding the complete toolset for Wafer Level Packaging (WLP) applications.
- The new system enables to solve various challenges with the introduction of innovations in deposition technology as well as materials that are used for developing and manufacturing TSVs in a more cost-effective manner.
- The Ventura system supports manufacturing of high-yielding 3D chips, thereby introducing advances in ionised PVD technology.
- The developments brought along with this new system can significantly help in improving directionality in order to enable deposition of uniform, continuous and thin metal layers which penetrate deep in the Vias for achieving void-free fill, required for strong TSV.
- The attributes of Ventura system as well as adopting titanium in the form of alternate barrier will help in improving device reliability as well as reducing overall cost of ownership.
Statement from Vice President and General Manager of Metal Deposition Products, Applied Materials
The Vice President and General Manager of Metal Deposition Products, Applied Materials, Inc. (NASDAQ:AMAT), Dr. Sundar Ramamurthy explained that the Ventura system allows fabrication of robust high-aspect ratio TSVs because it is built on 15 years of leadership in a unique copper interconnect technology. This system, he explained, enables up to 50% barrier seed cost savings sin comparison to copper interconnect PVD systems.